型号:

BUK625R0-40C,118

RoHS:
制造商:NXP Semiconductors描述:MOSFET N-CH TRENCH DPAK
详细参数
数值
产品分类 分离式半导体产品 >> FET - 单
BUK625R0-40C,118 PDF
标准包装 1
系列 TrenchMOS™
FET 型 MOSFET N 通道,金属氧化物
FET 特点 逻辑电平门
漏极至源极电压(Vdss) 40V
电流 - 连续漏极(Id) @ 25° C 90A
开态Rds(最大)@ Id, Vgs @ 25° C 5 毫欧 @ 25A,10V
Id 时的 Vgs(th)(最大) 2.8V @ 1mA
闸电荷(Qg) @ Vgs 88nC @ 10V
输入电容 (Ciss) @ Vds 5200pF @ 25V
功率 - 最大 158W
安装类型 表面贴装
封装/外壳 TO-252-3,DPak(2 引线+接片),SC-63
供应商设备封装 D-Pak
包装 剪切带 (CT)
其它名称 568-6901-1
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